MOSFETs | NDS332P

P 沟道逻辑电平增强型场效应晶体管，-20V，-1A，0.41Ω

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概览

此类 P 沟道逻辑电平增强型电场效应晶体管是使用 Fairchild 的高单元密度 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此类器件特别适用于笔记本电脑电源管理、便携式电子设备和其他电池供电电路等低压应用，在此类应用中需要在非常小形的表面贴装封装中实现快速高压侧开关和线路内低功率损耗。

  • This product is general usage and suitable for many different applications
  • -1 A, -20 V, RDS(ON) = 0.41Ω @ VGS= -2.7 V, RDS(ON) = 0.3 Ω @ VGS = -4.5 V.
  • 栅极驱动电平要求极低，从而可在3V电路中直接运行。 VGS(th) < 1.0V。
  • 专有封装设计使用铜引线框架，可提供出色的热和电气能力。
  • 高密度单元设计，可实现极低的RDS(ON)。
  • 出色的导通阻抗和最大的DC电流能力。
  • 紧凑型工业标准SOT-23表面贴装封装。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDS332P

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Active

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

-20

-

P-Channel

Single

8

-1

-1

0.5

410

300

2

3.7

195

$0.1393

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