MOSFETs | NDS9945

双N沟道增强模式场效应晶体管

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概览

SO-8 N沟道增强模式功率场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为提供卓越开关性能和最大限度地降低通态电阻而定制的。 这些器件特别适合需要快速开关、低线路内功率损耗以及抗瞬变能力的磁碟驱动器电机控制、电池供电电路等低电压应用。

  • This product is general usage and suitable for many different applications.
  • 3.5 A，60 V。 RDS(ON) = 0.100 Ω @ VGS = 10 V，RDS(ON) = 0.200 Ω @ VGS = 4.5 V。
  • 高密度单元设计，可实现极低的RDS(ON)。
  • 采用广泛使用的表面贴装封装，具有高功率和高电流处理能力。
  • 采用表面贴装封装的双MOSFET。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDS9945

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

60

Q1: 100.0, Q2: 100.0

N-Channel

Dual

±20

3

3.5

49

-

Q1: 200.0, Q2: 200.0

-

12.9

345

$0.7736

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