MOSFETs | NTB25P06

单 P 沟道，功率 MOSFET，-60V，-27.5A，82 mΩ

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概览

此功率 MOSFET 适用于承受雪崩和换相模式下的高能量。此类器件针对电源、转换器和电源电机控制中的低压、高速开关应用而设计，尤其适用于二极管速度和换相安全运行区域非常关键的桥式电路，可针对非预期的瞬时电压提供附加安全裕度。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTB25P06T4G

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418B-04

1

260

REEL

800

Y

-60

82

P-Channel

Single

15

4

-27.5

120

-

-

-

33

1200

$1.0162

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