NTHL041N60S5H: Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 57 A, 41 mΩ, TO-247

Datasheet: MOSFET – Power, Single N-Channel, SUPERFET® V, FAST, 600 V, 41 mOhm, 57 A
Rev. 2 (259kB)
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The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.
特性   优势
     
  • Ultra Low Gate Charge (Typ. Qg = 108 nC)
 
  • Low switching loss
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 643 pF)
 
  • Low switching loss
  • Fast switching performance with robust body diode
 
  • Low switching loss and higher system reliability
  • 650 V @ TJ = 150°C
   
  • Typ. RDS(on) = 32.8 m Ω
   
  • 100% Avalanche Tested
   
  • RoHS Compliant
   
  • Internal Gate Resistance: 0.6 Ω
   
应用   终端产品
  • Telecommunication
  • Cloud system
  • Industrial
 
  • Telecom power
  • Server power
  • EV Charger
  • Solar / UPS
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NTHL041N60S5H Active
Pb-free
Halide free
NTHL041N60S5H TO-247-3LD 340CX NA Tube 450 $3.37
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTHL041N60S5H  
 $3.37 
Pb
H
 Active   
N-Channel
Single
600
30
4.3
57
329
41
108
5840
TO-247-3LD
外形
340CX   
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