NTHL099N60S5: Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 33 A, 99 mΩ, TO-247

Datasheet: MOSFET - Power, Single N-Channel SUPERFET V, Easy Drive, TO247-3L
Rev. 2 (261kB)
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The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency
特性   优势
     
  • Ultra Low Gate Charge (Typ. Qg= 48 nC)
 
  • Low switching loss
  • Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)
 
  • Low switching loss
  • Optimized Capacitance
 
  • Lower peak Vds and lower Vgs oscillation
  • 650 V @ TJ = 150°C
   
  • Typ. RDS(on) = 79.2 m Ω
   
  • 100% Avalanche Tested
   
  • RoHS Compliant
   
  • Internal Gate Resistance: 6.9 Ω
   
应用   终端产品
  • Telecommunication
  • Cloud system
  • Industrial
 
  • Telecom power
  • Server power
  • EV Charger
  • Solar / UPS
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NTHL099N60S5 Active
Pb-free
NTHL099N60S5 TO-247-3LD 340CX NA Tube 450 $2.1977
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTHL099N60S5  
 $2.1977 
Pb
 Active   
N-Channel
Single
600
4
4
33
184
99
48
2500
TO-247-3LD
外形
340CX   
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