单 P 沟道,ChipFET™ 功率 MOSFET,-20V,-6.7A,34mΩ

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功率 MOSFET,-20 V,-6.7 A, 单 P 沟道,ChipFET™

  • Optimized for Battery and Load Management Applications in Portable Equipment and other Portable Applciations
  • Charge Control in Battery Chargers
  • Buck and Boost Converters
  • MP3 Players
  • Cell Phones
  • Digital Cameras
  • PDAs
  • Offers an Ultra Low RDS(on) Solution in the ChipFet™ Package
  • Miniature ChipFet™ Package with 40 % Smaller Footprint than TSOP-6, makes it an ideal device for Applications where board space is at a premium.
  • Low Profile (< 1.1 mm) allows it to fit easily into extremely thin environments such as Portable Electronics.
  • Designed to Provide Low RDS(on) at Gate Voltage ( as low as 1.8V). The Operating Voltage used in many Logic ICs in Portable Electronics.
  • Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not required.
  • Operated at Standard Logic Level Gate Drive, Facilitating Future Migrations to Lower Levels using the same Basic Topology.

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTHS4101PT1G

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Active

CAD Model

Pb

A

H

P

ChipFET-8

1

260

REEL

3000

Y

-20

-

P-Channel

Single

8

1.5

4.8

1.3

30

21

-

25

2100

$0.4133

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