MOSFETs | NTJD4401N

双 N 沟道，小信号 MOSFET，带 ESD 防护，20V，630mA，375mΩ

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CAD Model

CAD模型

概览

此双 N 沟道器件使用小占地面积封装 (2x2 mm) 和安森美半导体的领先平面工艺，可减小占地面积，提高效率。 外形小巧的特性特别适用于单锂离子电池或双电池锂离子电池供电设备，例如手机、媒体播放器、数码相机和 PDA。

  • Load Power Switching
  • Li-Ion Battery Supplied Devices
  • DC-DC Conversion
  • Cell Phones
  • Media Players
  • Digital Cameras
  • PDAs
  • Small Footprint (2 x 2 mm)
  • Low Gate Charge N-Channel Device
  • ESD Protected Gate
  • Same Package as SC-70 (6 Leads)
  • RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTJD4401NT1

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Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

235

REEL

3000

N

20

-

N-Channel

Dual

12

1.5

0.63

0.55

Q1=Q2=445

Q1=Q2=375

8.6

1.3

33

Price N/A

More Details

NTJD4401NT1G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

20

-

N-Channel

Dual

12

1.5

0.63

0.55

Q1=Q2=445

Q1=Q2=375

8.6

1.3

33

$0.0721

More Details

NTJD4401NT2G

Loading...

Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

20

-

N-Channel

Dual

12

1.5

0.63

0.55

Q1=Q2=445

Q1=Q2=375

8.6

1.3

33

Price N/A

More Details

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