MOSFETs | NTLJD3115P

双 P 沟道功率 MOSFET -20V -4.1A 100mΩ

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概览

功率 MOSFET -20 V，-4.1 A，µCool™ 双 P 沟道，2x2 mm WDFN 封装

  • Optimized for Battery and Load Management Applications in Portable Equipment
  • Li-Ion Battery Charging and Protection Circuits
  • High Side Load Switch
  • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
  • 2x2 mm Footprint Same as SC-88
  • Lowest RDS(on) Solution in 2x2 mm Package
  • 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
  • Bidirectional Current Flow with Common Source Configuration

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTLJD3115PT1G

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Active

CAD Model

Pb

A

H

P

WDFN-6

506AN

1

260

REEL

3000

Y

-20

-

P-Channel

Dual

8

1

3.3

1.5

Q1=Q2=135

Q1=Q2=100

6.5

5.5

531

$0.2317

More Details

NTLJD3115PTAG

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Obsolete

CAD Model

Pb

A

H

P

WDFN-6

506AN

1

260

REEL

3000

N

-20

-

P-Channel

Dual

8

1

3.3

1.5

Q1=Q2=135

Q1=Q2=100

6.5

5.5

531

Price N/A

More Details

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