Low/Medium Voltage MOSFETs | NTLJS3D0N02P8Z

MOSFET，功率，20V，N 沟道，WDFN6

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MOSFET，功率，单 20V/±12 N 沟道，3.8mΩ，4.5V，20.2A，WDFN6 2x2x0.8mm

  • DC-DC Converters
  • Power Management and Protection
  • Wireless Charging
  • Battery Management and Protection
  • Battery Management and Protection

  • Cell Phones, Tablets, NoteBooks, Other Portable End Products

  • Ultra Low RDS(on)
  • Small Footprint of 4mm²
  • Pb−Free, Halogen−Free/BFR−Free

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTLJS3D0N02P8ZTAG

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CAD Model

Pb

A

H

P

PQFN-6

483AV

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Standard

0

Single

0

20

-

-

-

-

-

-

-

-

-

-

-

-

-

-

$0.3333

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可靠性数据

Die Related Summary Data

Device: NTLJS3D0N02P8ZTAG

Equivalent to wafer fab process: TRENCH FET

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET

10

8953674244

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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