单 P 沟道沟槽功率 MOSFET,带 ESD 保护 -20V -8.2A 18mΩ

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概览

功率 MOSFET -20 V,-8.2 A,单 P 沟道, 2.0x2.0x0.55 mm UDFN 封装

  • Optimized for Power Management Applications for Portable Products
  • Battery Switch
  • High Side Load Switch
  • Portable Products such as Cell Phones, Media Tablets, PMP, DSC, GPS, and Others
  • UDFN Package with Exposed Drain Pads
  • Low Profile UDFN 2.0x2.0x0.55 mm
  • Ultra Low RDS(on)
  • ESD DiodeProtected Gate
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTLUS3A18PZTAG

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Last Shipments

CAD Model

Pb

A

H

P

UDFN-6

1

260

REEL

3000

N

-20

-

P-Channel

Single

8

1.5

8.2

1.7

25

18

29

28

2240

Price N/A

More Details

NTLUS3A18PZTBG

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Last Shipments

CAD Model

Pb

A

H

P

UDFN-6

1

260

REEL

3000

N

-20

-

P-Channel

Single

8

1.5

8.2

1.7

25

18

29

28

2240

Price N/A

More Details

NTLUS3A18PZTCG

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Obsolete

CAD Model

Pb

A

H

P

UDFN-6

1

260

REEL

3000

N

-20

-

P-Channel

Single

8

1.5

8.2

1.7

25

18

29

28

2240

Price N/A

More Details

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