功率 MOSFET 40V 8.9A 20 mΩ 双 N 沟道 SO-8 逻辑电平

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功率 MOSFET 40 V,8.9 A,20 m,双 N 沟道 SO−8

  • This product is general usage and suitable for many different applications
  • Low RDS(on)
  • Low Capacitance
  • Optimized Gate Charge
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMD5838NLR2G

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

40

Q1: 20.0, Q2: 20.0

N-Channel

Dual

20

3

8.9

2.1

-

Q1: 36.5. Q2: 36.5

9.7

17

785

Price N/A

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