双 P 沟道,功率 MOSFET,-20V,-6A,33mΩ

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功率 MOSFET,6 A,20 V,P 沟道,SOIC−8,双

  • Power Management in Portable and Battery-Powered Products
  • Cellular and Cordless Telephones
  • PCMCIA Cards
  • Ultra Low RDS(on)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive
  • Miniature Dual SO-8 Surface Mount Package
  • Diode Exhibits High Speed, Soft Recovery
  • Avalanche Energy Specified
  • SO-8 Mounting Information Provided
  • Pb-Free Packages are Available

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMD6P02R2G

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

-20

-

P-Channel

Dual

12

-1.2

6

1.4

Q1=Q2=50

Q1=Q2=33

7.7

20

1380

$0.49

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