N-Channel Shielded Gate PowerTrench® MOSFET 80V, 32A, 6.0mΩ

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概览

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

  • Primary Mosfet in isolated DC-DC
  • Synchronous Rectifier in AC-DC or DC-DC Power supplies
  • Power Supplies
  • Motor control
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Soft Body diode
  • Max rDS(on) = 14.3 mΩ at VGS = 6 V, ID = 16 A
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 32 A
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMFS006N08MC

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Active

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

Y

80

6

N-Channel

Single

20

4

32

2.5

"-"

"-"

"-"

30

2300

$0.8202

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