NTMFS10N7D2C

功率 MOSFET，单 N 沟道，标准门极，100 V，78 A，7.2 mΩ

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CAD模型

概览

此 N 沟道 MV MOSFET 使用安森美半导体先进的 PowerTrench® 工艺生产，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时可保持卓越的开关性能，以及业内最佳的软体二极管。

应用

Motor Control
DC-DC Converters
Battery management
Solar inverters

终端产品

Multi Rotor Drones, Power Tools
Power Supplies
Battery packs and chargers
Power Optimizer

特性

Low Q_rr
Soft reverse recovery body diode
Low R_DS(on)
Small Footprint (5 x 6 mm)
Shielded Gate MOSFET Technology
100% UIL Tested
MSL1 Robust Package Design
RoHS Compliant

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NTMFS10N7D2C

Active

PQFN-8

483AE

260

REEL

3000

100

7.2

N-Channel

Single

±20

1880

$1.3685

产品型号:

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MOSFETs | NTMFS10N7D2C

功率 MOSFET，单 N 沟道，标准门极，100 V，78 A，7.2 mΩ

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