NTMFS4833N

单 N 沟道，功率 MOSFET，30V，191A，2mΩ

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数据表

CAD模型

概览

功率 MOSFET，30V，191 A，单 N 沟道，SO−8FL

应用

CPU Power Delivery
DC−DC Converters
Low Side Switching

终端产品

Computing, Netcom, Power Supply

特性

Low r_DS(on) to Minimize Conduction Loss
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NTMFS4833NT1G

Last Shipments

SO-8FL / DFN-5

488AA

260

REEL

1500

N-Channel

Single

2.5

191

46.3

5600

Price N/A

NTMFS4833NT3G

Last Shipments

SO-8FL / DFN-5

488AA

260

REEL

5000

N-Channel

Single

2.5

191

46.3

5600

Price N/A

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MOSFETs | NTMFS4833N

单 N 沟道，功率 MOSFET，30V，191A，2mΩ

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