单 N 沟道,功率 MOSFET,60V,26A,21mΩ

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概览

适用于紧凑和高效设计的功率 MOSFET,采用 5x6mm 扁平引线封装,且具有较高的热性能。

  • This product is general usage and suitable for many different applications
  • Small Footprint (5x6 mm) for Compact Design
  • Low rDS(on) to Minimize Conduction Loss
  • Low QG and Capacitance to Minimize Driver Losses
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMFS5C682NLT1G

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Lifetime

CAD Model

Pb

A

H

P

SO-8FL / DFN-5

1

260

REEL

1500

N

60

21

N-Channel

Single

±20

2

25

28

-

31.5

41

2.5

410

$0.1684

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