Low/Medium Voltage MOSFETs | NTMFS6H800N

单 N 沟道，功率 MOSFET，80V，203A，2.1mΩ

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概览

适用于紧凑和高效设计的商用功率 MOSFET，安装在 5x6mm 扁平引线封装中且具有较高的热性能。

  • Switching power supplies
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • 48V systems

  • Motor Control
  • Load Switch
  • DC/DC converter
  • Synchronous Rectifier

  • Small Footprint (5x6 mm)
  • Low RDS(on)
  • Low QG and Capacitance
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMFS6H800NT1G

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CAD Model

Pb

A

H

P

DFN5 5x6, 1.27P (SO−8FL)

506EZ

1

260

REEL

1500

Y

N-Channel

PowerTrench® T8

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

80

2.1

20

4

203

3.8

-

-

-

85

5530

16

82

760

27

$1.248

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可靠性数据

Die Related Summary Data

Device: NTMFS6H800NT1G

Equivalent to wafer fab process: TRENCH FET

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET

10

8953674244

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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