NTMFS6H800N: 单 N 沟道,功率 MOSFET,80V,203A,2.1mΩ

Datasheet: MOSFET — Power, Single, N-Channel, 80 V, 2.1 mΩ, 203 A
Rev. 2 (136kB)
产品概览
浏览可靠性数据
查看材料成分
产品更改通知
适用于紧凑和高效设计的商用功率 MOSFET,安装在 5x6mm 扁平引线封装中且具有较高的热性能。
特性   优势
     
  • Small Footprint (5x6 mm)
 
  • Compact Design
  • Low RDS(on)
 
  • Minimize Conduction Losses
  • Low QG and Capacitance
 
  • Minimize Driver Losses
  • RoHS Compliant
   
应用   终端产品
  • Switching power supplies
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • 48V systems
 
  • Motor Control
  • Load Switch
  • DC/DC converter
  • Synchronous Rectifier
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
STR-30-60V-BLDC-MDK-GEVB Active
Pb-free
1kW, 30-60V Motor Development Board
STR-30-60V-BLDC-MDK-GEVK Active
Pb-free
1kW, 30-60V Motor Development Board
Availability & Samples
Specifications
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTMFS6H800NT1G Active
Pb-free
Halide free
NTMFS6H800N DFN5 5x6, 1.27P (SO−8FL) 506EZ 1 260 Tape and Reel 1500 $2.4797
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTMFS6H800NT1G  
 $2.4797 
Pb
H
 Active   
N-Channel
Single
80
20
4
203
3.8
-
-
2.1
-
85
5530
DFN5 5x6, 1.27P (SO−8FL)
外形
488AA    506EZ   
之前浏览的产品
清除列表

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.