NTMFS7D5N15MC: N-Channel Shielded Gate PowerTrench® MOSFET 150V, 95.6A, 7.9mΩ

Datasheet: MOSFET - N-Channel Shielded Gate PowerTrench
Rev. 1 (215kB)
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This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
特性   优势
     
  • Shielded Gate MOSFET Technology
 
  • Optimized Switching performance
  • Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A
 
  • Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching
  • Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A
 
  • High efficiency with lower switching spike and EMI
  • Lowers Switching Noise/EMI
 
  • Improved switching FOM particularly Qgd
  • MSL1 Robust Package Design
 
  • No need or less snubber
  • 100% UIL Tested
   
  • RoHS Compliant
   
应用   终端产品
  • Primary mosfet
  • Synchronous Rectifier
  • motor switch
 
  • Power Supplies
  • Motor Control
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
STR-60-100V-BLDC-MDK-GEVB Active
Pb-free
1kW, 60-100V Motor Development Board
STR-60-100V-BLDC-MDK-GEVK Active
Pb-free
1kW, 60-100V Motor Development Board
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTMFS7D5N15MC Active
Pb-free
Halide free
NTMFS7D5N15MC PQFN-8 483AF 1 260 Tape and Reel 3000 $2.1157
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTMFS7D5N15MC  
 $2.1157 
Pb
H
 Active   
N-Channel
Single
150
20
4.5
95.6
3.3
7.9
46
3835
PQFN-8
外形
483AF   
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