Power MOSFET, 60V N Channel 235A 1.5m Ohm in Dualcool56 package

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This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

  • Synchronous Rectifier in AC-DC and DC-DC power supplies
  • Motor Switch
  • Load switch

  • Power Supplies
  • Motor control
  • Solar Inverters
  • Motor Control

  • Top and bottom sided exposed in standard 5x6mm pin-out
  • Ultra low RDS-on
  • Reduced capacitances and package inductance

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMFSC1D6N06CL

Active

CAD Model

Pb

A

H

P

DFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 56 Dual Cool

Low-Medium Voltage

Logic

0

Single

0

60

1.5

20

2

235

3.8

-

2.3

41

91

6660

9

130

3000

45

$0.7132

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