Low/Medium Voltage MOSFETs | NTMFSS0D9N03P8

MOSFET, Power Source Down, 30V Single N-Channel

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MOSFET, Power Source-Down Technology, 30V Single N-Channel, 1mΩ, 275A, 121W, WDFN9 5x6mm

  • DC-DC Converters
  • Secondary Rectification
  • ORing
  • POL
  • Battery Management

  • Server, Telecom, High End Computing

  • Low RDS(on) with Source-Down Technologies
  • Low QG and Capacitance
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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NTMFSS0D9N03P8

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CAD Model

Pb

A

H

P

TDFN9 5x6, 1.27P

520AE

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 Source Down

Low-Medium Voltage

Logic

0

Single

0

30

1

±20

3

275

121

N/A

1.2

64

133

9210

22

N/A

3100

370

$0.8666

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可靠性数据

Die Related Summary Data

Device: NTMFSS0D9N03P8

Equivalent to wafer fab process: TRENCH FET

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET

10

8953674244

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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