单 P 沟道,增强模式功率 MOSFET,-20V,-10A,14mΩ

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功率 MOSFET,−10 A,-20 V,P 沟道增强模式,单 SOIC−8 封装

  • Power Management in Portable and Battery-Powered Products
  • Cellular and Cordless Telephones
  • PCMCIA Cards
  • Ultra Low RDS(on)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive
  • Miniature SO-8 Surface Mount Package
  • Diode Exhibits High Speed, Soft Recovery
  • Avalanche Energy Specified
  • SOIC-8 Mounting Information Provided

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMS10P02R2

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

235

REEL

2500

N

-20

-

P-Channel

Single

12

-1.2

-10

0.6

20

14

12.2

48

3100

Price N/A

More Details

NTMS10P02R2G

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

-20

-

P-Channel

Single

12

-1.2

-10

0.6

20

14

12.2

48

3100

$0.7157

More Details

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