单 P 沟道增强模式功率 MOSFET -20V,-5.4A,33mΩ

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概览

这是一款 20 V P 沟道功率 MOSFET。

  • Power Management in Portable and Battery-Powered Products
  • Computers
  • Printers
  • PCMCIA Cards
  • Cellular & Cordless Telephones
  • High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency
  • Miniature SO-8 Surface Mount Package--Saves Board Space
  • Diode Exhibits High Speed with Soft Recovery
  • IDSS Specified at Elevated Temperature
  • Drain-to-Source Avalanche Energy Specified
  • Mounting Information for the SOIC-8 Package is Provided
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMS5P02R2

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

235

REEL

2500

N

-20

-

P-Channel

Single

10

-1.25

-5.4

2.5

48

33

48

4

1375

Price N/A

More Details

NTMS5P02R2G

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

-20

-

P-Channel

Single

10

-1.25

-5.4

2.5

48

33

48

4

1375

$0.354

More Details

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