MOSFETs | NTMTS0D7N04C

功率 MOSFET，单 N 沟道，40 V，0.67 mΩ，420 A

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CAD Model

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概览

此 N 沟道 MV MOSFET 是使用安森美半导体先进的 Power Trench 工艺生产的，该工艺结合了屏蔽门极技术。此工艺经过了优化，可最大程度降低导通电阻，同时使用业内最佳的软体二极管来保持出色的开关性能。

  • Battery Switch
  • Switching power supplies
  • Load Switch
  • AC-DC Power Supplies
  • Motor Control
  • Small Footprint (8x8 mm)
  • Low RDS(on)
  • Low QG and Capacitance
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMTS0D7N04CTXG

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Active

CAD Model

Pb

A

H

P

DFNW-8

507AP

1

260

REEL

3000

Y

40

0.67

N-Channel

Single

20

4

420

4.9

-

-

-

140

9230

$1.7908

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