Low/Medium Voltage MOSFETs | NTP6412AN

单 N 沟道，功率 MOSFET，100V， 58A，18.2mΩ

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概览

这是一个 100 V N 沟道功率 MOSFET。

  • Motor Control
  • UPS Inverter

  • Low RDS(on)
  • High current capability
  • 100% Avalanche tested
  • RoHS Compliant

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTP6412ANG

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

Y

N-Channel

PowerTrench® T1

TO-220

Low-Medium Voltage

Standard

0

Single

0

100

18.2

20

4

58

167

-

-

2.5

73

2700

35

270

400

150

$0.9668

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可靠性数据

Die Related Summary Data

Device: NTP6412ANG

Equivalent to wafer fab process: HD3e

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

HD3e

0

8569312242

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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