MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, TO-220F

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800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantlyimproves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrialpower supplies.

  • Computing
  • Consumer
  • Industrial
  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD / LED TV / Audio
  • LED Lighting / Ballast
  • Adapter
  • 900 V @ TJ = 150 °C
  • Ultra Low Gate Charge (Typ. Qg = 25.3 nC)
  • Low Stored Energy in Output Capacitance (Eoss = 2.72 µJ @ 400 V)
  • Optimized Capacitance
  • ESD Improved Capability with Zener Diode
  • Typ. RDS(on) = 300 mΩ
  • RoHS Compliant
  • 100% Avalanche Tested
  • Internal Gate Resistance: 4 Ω

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTPF360N80S3Z

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

Y

800

360

N-Channel

Single

±30

3.8

13

31

~NA~

~NA~

~NA~

25.3

1143

$1.4679

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