MOSFETs | NVJD5121N

双 N 沟道功率 MOSFET，带 ESD 防护 60V，295mA，1.6Ω

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适用于低功率应用的汽车用功率 MOSFET。60V 295mA 1.6 Ω 双 N 沟道 SC−88，带 ESD 防护，逻辑电平。通过 AEC-Q101 认证的 MOSFET，符合生产件批准程序 (PPAP)，适用于汽车应用。

  • Low Side Load Switch
  • DC−DC Converters (Buck and Boost Circuits)
  • Infotainment systems. Radios. Navigation systems. Clusters
  • Leading Edge Trench Technology for Low RDS(on)
  • Low Gate Threshold
  • Low Input Capacitance
  • ESD Protected Gate

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NVJD5121NT1G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Y

60

Q1=Q2=1600

N-Channel

Dual

20

2.5

0.295

0.25

-

Q1=Q2=2500

10

0.9

26

$0.0818

More Details

NVJD5121NT2G

Loading...

Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

60

1600

P-Channel

Dual

20

2.5

0.295

0.25

~NA~

2500

0.9

0.9

26

$0.08

More Details

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