双 N 沟道,功率 MOSFET,40V,5.8A,34mΩ

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汽车功率 MOSFET。NTMD6N04R2G,40V,6.0A,双 N 沟道,SOIC-8 通过 AEC-Q101 认证 MOSFET 且符合生产件批准程序 (PPAP) ,适用于汽车应用。

  • DC-DC Converter
  • Buck-Boost Circuit
  • Computers
  • Printers
  • Cellular and Cordless Phones
  • Disk Drives and Tape Drives
  • Designed for use in Low Voltage High Speed switching applications.
  • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life
  • Miniature SOIC−8 Surface Mount Package Saves Board Space
  • Diode is Characterized for Use in Bridge Circuits
  • Diode Exhibits High Speed, with Soft Recovery
  • AEC−Q101 Qualified and PPAP Capable
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NVMD6N04R2G

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CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

40

Q1=Q2=34

N-Channel

Dual

20

3

5.8

2

-

Q1=Q2=43

11

20

723

$0.8906

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