NVTFS002N04CL: 单 N 沟道,40 V,2.2 Ω,142 A,功率 MOSFET

Datasheet: MOSFET — Power, Single N-Channel, 40 V, 2.2 mΩ, 142 A
Rev. 2 (206kB)
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适用于紧凑和高效设计的汽车用功率 MOSFET,采用 3x3mm 扁平引线封装,且具有较高的热性能。可用于增强光学检测的可润湿侧翼选项。通过 AEC-Q101 认证的 MOSFET,符合生产件批准程序 (PPAP),适用于汽车应用。
特性   优势
     
  • Small Footprint (3x3 mm)
 
  • Compact Design
  • Low On-Resistance
 
  • Minimize Conduction Losses
  • Low Capacitance
 
  • Minimize Driver Losses
  • NVTFS5C453NLWF − Wettable Flanks Product
 
  • Enhanced Optical Inspection
  • AEC−Q101 Qualified and PPAP Capable
 
  • Suitable for Automotive Applications
  • RoHS Compliant
   
应用   终端产品
  • Reverser Battery protection
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • Switching power supplies
 
  • Solenoid Driver – ABS, Fuel injection
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
STR-FUSB3307MPX-PPS-GEVK Active
Pb-free
Strata Enabled FUSB3307 Single Port USB-PD with PPS Board
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NVTFS002N04CLTAG Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVTFS002N04CL WDFN-8 511DY 1 260 Tape and Reel 1500 $0.9067
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NVTFS002N04CLTAG  
 $0.9067 
Pb
A
H
P
 Active   
N-Channel
Single
40
±20
2
142
85
3.5
2.2
49
2940
WDFN-8
外形
511DY   
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