MOSFETs | RFD16N05LSM

N 沟道逻辑电平功率 MOSFET 50V，16A，47mΩ

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这些 N 沟道逻辑电平功率 MOSFET 是使用 MegaFET 工艺生产的。此工艺使用接近 LSI 集成电路的特性尺寸，可实现硅的优化利用，因此性能非常出色。它们适用于可编程控制器、汽车开关、开关稳压器、电机继电器驱动器及双极晶体管的发射器开关等应用中的逻辑电平 (5V) 驱动电源。此性能是通过一个特殊的门极氧化层设计实现的，它能在 3V 到 5V 范围内的门极偏置下提供全额定传导，因此可以真正实现直接在逻辑电路电源电压中的开关电源控制。之前的开发型号为 TA09871。

  • AC-DC商用电源-服务器和工作站
  • 工作站
  • 服务器和大型机
  • 16A, 50V
  • rDS(ON)= 0.047Ω
  • UIS SOA等级曲线（单脉冲）
  • 针对5V栅极驱动优化的设计
  • 可直接从CMOS、NMOS、TTL电路驱动
  • SOA为有限功耗
  • 纳秒开关速度
  • 线性传递特性
  • 高输入阻抗
  • 多数载流子器件
  • 相关文献

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V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

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VGS Max (V)

VGS(th) Max (V)

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RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

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RFD16N05LSM9A

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A

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DPAK-3 / TO-252-3

369AS

1

260

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2500

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50

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N-Channel

Single

±10

2

16

60

-

50

-

43

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$0.4225

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