MOSFETs | RFD16N05SM

N 沟道，功率 MOSFET，50V，16A，47mΩ

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概览

RFD16N05 和 RFD16N05SM N 沟道功率 MOSFET 是使用 MegaFET 工艺生产的。此工艺使用接近 LSI 集成电路的特性尺寸，可实现硅的优化利用，因此性能非常出色。此类器件适用于开关稳压器、开关转换器、电机驱动器和继电器驱动器等应用。此类晶体管可直接在集成电路中运行。之前的开发型号为 TA09771。

  • AC-DC商用电源-服务器和工作站
  • 工作站
  • 服务器和大型机
  • 16A, 50V
  • rDS(ON)= 0.047Ω
  • 温度补偿式PSPICE模型
  • 峰值电流与脉宽曲线
  • UIS额定值曲线
  • 175°C工作温度
  • 相关文献

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

RFD16N05SM9A

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

50

47

N-Channel

Single

±20

4

16

72

-

-

-

77

900

$0.4987

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