N 沟道增强型场效应晶体管 60V,0.115A,2Ω

概览

2N7002DW 是一种双 N 沟道 MOSFET,具有低导通电阻和低门极阈值电压。它还具有较高的开关速度,以及超小型表面贴装封装,因此适合很多不同的应用。

  • This product is general usage and suitable for many different applications.

  • 双N沟道数字MOSFET
  • 低导通电阻
  • 低栅极阈值电压
  • 低输入电容
  • 快速开关速度
  • 低输入/输出泄漏
  • 超小型表面贴装封装

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

60

Q1=Q2=2000

±20

2

0.115

0.2

-

Q1=Q2=7500

-

-

37.8

-

-

12.4

6.5

$0.0751

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