Small Signal MOSFETs | EFC4K110NUZTDG

双 N 沟道功率 MOSFET 24V，25A，2.95mΩ。

Obsolete

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概览

EFC4K110NUZTDG 具有超低导通电阻、高电流特性，采用小而薄的 CSP 封装。最适合 1 至 2 芯锂离子电池保护电路。

  • 1−2 Cells Lithium−ion Battery Charging and Discharging Switch in battery protection circuit

  • Smartphone
  • Tablet
  • Portable equipment

  • Low Rss(on)
  • Small size and narrow width
  • No latch up phenomenon
  • Low Gate Charge
  • 2kV ESD HBM
  • Common Drain Type
  • ESD Diode-protected Gate
  • RoHS compliance

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

EFC4K110NUZTDG

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Obsolete

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CAD Model

Pb

A

H

P

WLCSP10 3.2x2.1x0.14

567XT

NA

0

REEL

5000

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Dual Common Drain

0

24

~NA~

±12

1.3

25

2.5

7.4

2.95

49

~NA~

~NA~

~NA~

~NA~

~NA~

~NA~

Price N/A

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可靠性数据

Die Related Summary Data

Device: EFC4K110NUZTDG

Equivalent to wafer fab process: TRENCH FET LEGACY

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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