Small Signal MOSFETs | FDA8440

N 沟道，PowerTrench® MOSFET，逻辑电平，40 V，10 A，2.1 mΩ

Obsolete

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概览

N 沟道，PowerTrench® MOSFET，40 V，10 A，2.1 mΩ，这种最新的屏蔽门极 PowerTrench® MOSFET 具有更小的 QSYNC，卓越的软逆向恢复本征体二极管性能，开关速度快，可大幅提高同步整流的能效。

  • AC-DC商用电源
  • AC-DC商用电源-服务器和工作站
  • 工业级电机
  • 其他工业

  • RDS(on) = 1.46mΩ （典型值） @ VGS = 10V, ID = 80A
  • QG(tot) = 345nC（典型值） @ VGS = 10V
  • 低米勒电荷
  • 低 Qrr 体二极管
  • UIS 能力（单脉冲和重复脉冲）
  • 保证160A电流持续2秒
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDA8440

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Obsolete

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

N-Channel

PowerTrench® T1

TO-3P-3

Small Signal

Standard

0

Single

0

40

2.1

±30

3

100

306

-

-

-

345

18600

74

77

1840

1400

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDA8440

Equivalent to wafer fab process: T5

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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