Small Signal MOSFETs | FDMB2308PZ

双共漏极 P 沟道 PowerTrench® MOSFET -20V，-7A，36mΩ

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概览

此器件专门设计用作锂离子电池组保护电路和其他超便携应用中的单封装方案。它具有两个共漏极 P 沟道 MOSFET，可实现双向电流流向，基于安森美半导体先进的 PowerTrench® 工艺以及最新的 MicroFET 引线框架，FDMB2308PZ 可最大程度减小 PCB 空间和 rS1S2(on)。

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  • 最大值 rS1S2(on) = 36 mΩ（VGS = -4.5 V且ID = -5.7 A
    时）
  • 最大值 rS1S2(on) = 50 mΩ（VGS = -2.5 V且ID = -4.6 A
    时）
  • 薄型 – 最大0.8mm – 采用新的MicroFET 2x3 mm封装
  • HBM静电放电保护等级为2.8kV（注3）
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMB2308PZ

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CAD Model

Pb

A

H

P

WDFN-6

511CX

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

WDFN-6

Small Signal

Logic

0

Dual

0

-20

-

12

-1.5

-7

2.2

Q1=Q2=50

Q1=Q2=36

7

22

2280

-

-

-

-

$0.4131

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可靠性数据

Die Related Summary Data

Device: FDMB2308PZ

Equivalent to wafer fab process: RN

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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