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此 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench 工艺生产的,特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。此类器件非常适用于要求线内低功率损耗和快速开关的低压和电池供电应用。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDS6612A
Pb
A
H
P
SOIC-8
1
260
REEL
2500
N
N-Channel
PowerTrench® T1
SOIC-8
Small Signal
Logic
0
Single
0
30
22
20
3
8.4
2.5
-
30
21
5.4
560
-
-
-
-
Price N/A
More Details
FDS6612A-NB5E029A
Pb
A
H
P
SOIC-8
1
260
REEL
2500
N
N-Channel
PowerTrench® T1
SOIC-8
Small Signal
Logic
0
Single
0
30
22
20
3
8.4
2.5
-
30
21
5.4
560
-
-
-
-
Price N/A
More Details
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可靠性数据
Die Related Summary Data
Device: FDS6612A
Equivalent to wafer fab process: T2
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
T2
0
1290840276
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)