单 N 沟道,逻辑电平,Power Trench® MOSFET,30V,8.4A,22mΩ

Last Shipments

概览

此 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench 工艺生产的,特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。此类器件非常适用于要求线内低功率损耗和快速开关的低压和电池供电应用。

  • This product is general usage and suitable for many different applications.

  • 8.4 A,30 V
  • RDS(ON) = 22 mΩ @ VGS = 10 V
  • RDS(ON) = 30 mΩ @ VGS = 4.5 V
  • 快速开关速度
  • 低栅极电荷
  • 高性能沟道技术可实现极低的rDS(on)
  • 高功率和高电流处理能力

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

30

22

20

3

8.4

2.5

-

30

21

5.4

560

-

-

-

-

Price N/A

More Details

FDS6612A-NB5E029A

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

30

22

20

3

8.4

2.5

-

30

21

5.4

560

-

-

-

-

Price N/A

More Details

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