Small Signal MOSFETs | BSS123W

N 沟道逻辑电平增强型场效应晶体管 100V，0.17A，6Ω

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概览

此 N 沟道增强型 MOSFET 是使用高单元密度的沟槽 MOSFET 技术生产的。此产品可最大程度地降低导通状态电阻，同时具备坚固、可靠和快速开关性能。这些产品尤其适合低电压、低电流应用，如小型伺服电机控制、功率 MOSFET 门极驱动器和其他开关应用。

  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • Logic Level Transistors
  • High Speed Line Drivers
  • Power Management
  • Power Supply and Switching

  • 0.17 A, 100 V, RDS(ON) = 6 Ω @ VGS = 10 V
  • 高密度单元设计，实现低 RDS(ON)
  • 坚固而可靠
  • 超小型表面贴装封装
  • 低电容
  • 快速开关速度
  • 无铅/符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

BSS123W

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CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419AB

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-70-3

Small Signal

Logic

0

Single

0

100

6000

±20

2

0.17

0.2

-

10000

-

1.1

71

-

-

71

2.74

Price N/A

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可靠性数据

Die Related Summary Data

Device: BSS123W

Equivalent to wafer fab process: TR

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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