N 沟道逻辑电平增强型场效应晶体管 50V,0.22A,1.6Ω

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N 沟道逻辑电平增强型场效应晶体管 50V,0.22A,1.6Ω

  • This product is general usage and suitable for many different applications.

  • 低导通电阻
  • 低栅极阈值电压
  • 低输入电容
  • 快速开关速度
  • 低输入/输出泄漏
  • 超小型表面贴装封装
  • 无铅/符合RoHS标准
  • 根据JEDEC A114A,ESD HBM=2000V;根据JEDEC C101C,ESD CDM = 2000V

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

50

-

±12

1.2

220

0.35

2500

1600

-

2.4

58

0.5

-

9.75

5.2

$0.0417

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