Single P-Channel Power MOSFET, -20V, -2.5A, 137mΩ

已停产

概览

This Power MOSFET is produced using onsemi’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.

  • Load Switch
  • Motor Driver
  • White goods, Game, Mobile Scanner, Recorder, Ink Jet Printer
  • 1.8V Drive
  • Low On-Resistance
  • ESD Diode - Protected Gate
  • RoHS Compliance

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

CPH3356-TL-H

已停产

CAD Model

Pb

A

H

P

CPH-3

1

260

REEL

3000

No

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Single

0

-20

-

10

1.4

-2.5

1

203

137

4.7

3.3

250

0.72

-

60

45

Price N/A

More Details

CPH3356-TL-W

已停产

CAD Model

Pb

A

H

P

CPH-3

1

260

REEL

3000

No

P-Channel

PowerTrench® T1

CPH-3

Small Signal

Logic

0

Single

0

-20

-

10

1.4

-2.5

1

203

137

4.7

3.3

250

0.72

-

60

45

Price N/A

More Details

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