单 N 沟道,功率 MOSFET,35V,3A,104mΩ

Last Shipments

概览

此功率 MOSFET 使用安森美半导体的沟槽技术生产,这是专为最大程度减小门极电荷、降低导通电阻而设计的技术。此器件适用于具有低门极电荷驱动或低导通电阻要求的应用。

  • Load Switch
  • Motor Drive

  • Server, Fridge, DSLR, Transceiver
  • Electronic Bidet Toilet Seat

  • Low On-Resistance :
    RDS(on) = 104mΩ (max) [ID = 1.5A, VGS = 10V]
  • ESD Diode-Protected Gate
  • RoHS compliance
  • 4V drive

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

CPH3455-TL-H

Last Shipments

CAD Model

Pb

A

H

P

CPH-3

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

CPH-3

Small Signal

Logic

0

Single

0

35

104

20

2.6

3

1

-

173

3.5

4

186

0.7

-

36

22

Price N/A

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