方案
By Technology
此功率 MOSFET 是使用安森美半导体 的沟槽技术生产的,专门用于最大程度减小门极电荷,降低导通电阻。此器件适用于具有低门极电荷驱动或低导通电阻要求的应用。
如需购买产品或样品,请先登录您的安森美账号。
搜寻
Close Search
产品:
1
分享
排序方式
产品系列:
┗
可订购器件:
1
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
ECH8659-TL-W
Pb
A
H
P
SOT-28 FL / ECH-8
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SOT-28FL-8
Small Signal
Logic
0
Dual
0
30
Q1=Q2=24
20
2.6
7
1.3
-
Q1=Q2=41
-
11.8
710
2
-
120
72
Price N/A
More Details
Show More
1-25 of 25
Products per page
Jump to :
Find and compare products, get support and connect with onsemi sales team.
Contact Sales
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms
可靠性数据
Die Related Summary Data
Device: ECH8659-TL-W
Equivalent to wafer fab process: TRENCH FET LEGACY
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
TRENCH FET LEGACY
2
15086608915
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)