Small Signal MOSFETs | EFC3J018NUZ

Power MOSFET, Dual N-Channel, 20 V, 23 A, 4.7 mΩ

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概览

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells lithium-ion battery applications.

  • 1-2 Cells Lithium-ion Battery Charging and Discharging Switch
  • lithium ion battery - Smart Phone,Cell Phone,Tablet PC, Wearable, Digital still camera, etc.
  • 2.5 V drive
  • ESD Diode-Protected Gate
  • Common-Drain Type
  • RoHS compliance
  • 2 kV ESD HBM

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

EFC3J018NUZTDG

联系销售

量产中

CAD Model

Pb

A

H

P

WLCSP-6

567KS

1

260

REEL

5000

No

N-Channel

PowerTrench® T1

WLCSP

Small Signal

Logic

0

Dual Common Drain

0

20

-

10

1.3

23

2.5

9

Q1=Q2= 4.7

7

75

NA

-

-

-

-

$0.4068

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可靠性数据

Die Related Summary Data

Device: EFC3J018NUZTDG

Equivalent to wafer fab process: TRENCH FET LEGACY

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

5

25938380737

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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