Small Signal MOSFETs | EFC4K105NUZ

Dual N-Channel Power MOSFET 22V, 25A, 3.55mΩ

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数据表

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概览

This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1, 2-cell lithium-ion battery applications.

  • 1,2-Cell Lithium-ion Battery Charging and Discharging Switch
  • Portable Machines
  • High Speed Switching
  • Low Gate Charge
  • 2.5 V Drive
  • 2 kV ESD HBM
  • Common-Drain Type
  • ESD Diode-Protected Gate
  • RoHS compliance

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

EFC4K105NUZTDG

联系销售

已停产

CAD Model

Pb

A

H

P

WLCSP-10

567PL

NA

0

REEL

5000

No

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Dual Common Drain

0

22

-

12

1.3

25

2.5

7.2

3.55

43

-

NA

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: EFC4K105NUZTDG

Equivalent to wafer fab process: TRENCH FET LEGACY

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

5

25938380737

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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