Small Signal MOSFETs | EFC6611R

用于 1 节锂电子电池保护的功率 MOSFET，12V，3.2mΩ，27A，双 N 沟道

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概览

此功率 MOSFET 导通电阻低。此器件适用于便携设备的电源开关等应用。最适合单节锂离子电池应用。

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  • Smart Phone
  • Cell Phone
  • Tablet PC
  • Digital Still Camera

  • 2.5V drive
  • Common-drain type
  • ESD Diode-Protected Gate
  • Pb-Free, Halogen Free and RoHS compliance
  • 2kV ESD HBM

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

EFC6611R-TF

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CAD Model

Pb

A

H

P

CSP-6

568AL

NA

0

REEL

5000

N

N-Channel

PowerTrench® T1

WLCSP

Small Signal

Logic

0

Dual Common Drain

0

12

-

±8

1.3

27

2.5

Q1=Q2=6.3

Q1=Q2=3.2

4

100

NA

-

-

-

-

Price N/A

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