Small Signal MOSFETs | FDC021N30

N 沟道，PowerTrench® MOSFET，30V，6.1A，26 mΩ

Obsolete

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概览

此 N 沟道 PowerTrench MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。

  • This product is general usage and suitable for many different applications.

  • 最大 rDS(on) = 26 mΩ（VGS = 10 V、ID = 6.1 A
    ）
  • 最大 rDS(on) = 33 mΩ（VGS = 4.5 V、ID = 5.3 A
    ）
  • 高性能沟槽技术可实现极低的 rDS(on)
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装
  • 快速开关速度
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC021N30

Contact Sales

Obsolete

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CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

TSOT-23-6

Small Signal

Logic

0

Single

0

30

26

20

3

6.1

1.6

-

33

6

3.7

510

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDC021N30

Equivalent to wafer fab process: U4

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

U4

0

1599145130

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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