Small Signal MOSFETs | FDC610PZ

P 沟道，PowerTrench® MOSFET，-30V，-4.9A，42mΩ

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概览

此 P 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。此类器件非常适用于电池电源应用：负载开关和电力管理、电池充电电路和 DC/DC 转换。

  • This product is general usage and suitable for many different applications.

  • 最大 rDS(on)=42mΩ（VGS=-10 V、ID=-4.9 A）
  • 最大 rDS(on)=75 mΩ（VGS=-4.5 V、ID=-3.7 A）
  • 低栅极电荷（典型值17 nC）。
  • 高性能沟道技术可实现极低的 rDS(on)。
  • SuperSOT™-6封装： 小尺寸（比标准 SO-8 小 72%）；薄型（1 mm 厚）。
  • 符合 RoHS 标准

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MSL Type

MSL Temp (°C)

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Container Qty.

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Channel Polarity

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC610PZ

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CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Single

0

-30

42

25

-3

-4.9

1.6

-

75

10.5

9

755

-

-

-

-

$0.1653

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可靠性数据

Die Related Summary Data

Device: FDC610PZ

Equivalent to wafer fab process: TV

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TV

0

1399545734

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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