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Small Signal MOSFETs | FDC638P
概览
此 P 沟道 2.5V 指定 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。此类器件非常适用于电池电源应用：负载开关和电力管理、电池充电电路和 DC/DC 转换。
- This product is general usage and suitable for many different applications.
- –4.5 A, –20 V.RDS(ON) = 48 mΩ @ VGS = –4.5 V
RDS(ON) = 65 mΩ @ VGS = –2.5 V - 低栅极电荷（10 nC，典型值）
- Low gate charge (10 nC typical)
- High performance trench technology for extremely low RDS(ON)
- SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
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FDC638P
Active
Pb
A
H
P
TSOT-23-6
1
260
REEL
3000
Y
P-Channel
PowerTrench® T1
SC-6
Small Signal
Logic
0
Single
0
-20
-
8
-1.5
-4.5
1.6
65
48
11
10
1160
-
-
-
-
$0.1733
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