Small Signal MOSFETs | FDC658P

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-4A，50mΩ

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概览

此 P 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。此类器件非常适用于笔记本电脑应用：负载开关和功率管理、电池充电电路和 DC/DC 转换。

  • This product is general usage and suitable for many different applications.

  • -4A，-30V。 VGS = -10 V时，RDS(ON) = 0.050 Ω；VGS = 4.5 V时，RDS(ON)
    = 0.075 Ω
  • 低栅极电荷（典型值8nC）。
  • 高性能沟道技术可实现极低的rDS(ON)。
  • SuperSOT™-6封装： 小尺寸（比标准SO-8封装小72%）；薄型（1mm厚）

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC658P

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CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Single

0

-30

50

20

-3

-4

1.6

-

75

-

8

750

-

-

-

-

$0.2007

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可靠性数据

Die Related Summary Data

Device: FDC658P

Equivalent to wafer fab process: TR

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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