单 P 沟道,逻辑电平,PowerTrench® MOSFET,-30V,-4A,50mΩ

概览

此 P 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻,同时保持低门极电荷,实现卓越的开关性能。此类器件非常适用于笔记本电脑应用:负载开关和功率管理、电池充电电路和 DC/DC 转换。

  • This product is general usage and suitable for many different applications.

  • -4A,-30V。 VGS = -10 V时,RDS(ON) = 0.050 Ω;VGS = 4.5 V时,RDS(ON)
    = 0.075 Ω
  • 低栅极电荷(典型值8nC)。
  • 高性能沟道技术可实现极低的rDS(ON)
  • SuperSOT™-6封装: 小尺寸(比标准SO-8封装小72%);薄型(1mm厚)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Single

0

-30

50

20

-3

-4

1.6

-

75

-

8

750

-

-

-

-

$0.2007

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