N 沟道,PowerTrench® MOSFET,30V,90A,5.0mΩ

Obsolete

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的,该工艺适用于最大程度降低导通电阻,同时保持卓越的开关性能。

  • AC-DC商用电源
  • AC-DC商用电源-台式计算机

  • RDS(on) = 3.7mΩ (典型值)@ VGS = 10V,ID = 25A
  • 快速开关速度
  • 低栅极电荷,QG = 33nC(典型值)
  • 高性能沟道技术可实现极低的 RDS(on)
  • 高功率和高电流处理能力
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD050N03B

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

Small Signal

Logic

0

Single

0

30

5

16

3

90

65

-

8.1

-

33

2160

-

-

-

-

Price N/A

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