Small Signal MOSFETs | FDD120AN15_F085

150 V、14 A、90 mΩ、DPAK
N 沟道 PowerTrench®

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N-Channel Power Trench® MOSFET, 150V, 14A, 120mΩ

  • 典型值 RDS(on) = 90.5 mΩ（VGS = 10 V、ID = 4 A 时）
  • 典型值 Qg(tot) = 11.3 nC（VGS = 10 V、ID = 4 A）
  • UIS 能力
  • 符合RoHS标准
  • 符合 AEC Q101 标准

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MSL Type

MSL Temp (°C)

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Container Qty.

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD120AN15A0-F085

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

Small Signal

Standard

0

Single

0

150

120

±20

4

14

65

-

-

-

11.3

743

2.6

94

85

20

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDD120AN15A0-F085

Equivalent to wafer fab process: 2C

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2C

0

3698398665

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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