Small Signal MOSFETs | FDD3860

N 沟道 PowerTrench® MOSFET，100 V，29 A，36 mΩ

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概览

此零部件采用专有的高密度沟槽 MOSFET 工艺，专门针对低 rDS(on) 和低 Qg 外形而设计，其雪崩坚固性适用于各种开关应用。

  • This product is general usage and suitable for many different applications.

  • VGS = 10V，ID = 5.9A时，最大RDS(on) = 36mΩ
  • 高性能沟道技术可实现极低的rDS(on)
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD3860

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Small Signal

Standard

0

Single

0

100

36

±20

4.5

29

83

-

-

-

22

1310

6.3

40

100

45

$0.4644

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可靠性数据

Die Related Summary Data

Device: FDD3860

Equivalent to wafer fab process: T2

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T2

0

1290840276

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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